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ST 13002T / ST 13003T
NPN Silicon Power Transistors
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator's, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection circuits.
E C B
TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Value Parameter Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - Continuous Collector Current - Peak Base Current - Peak
1) 1)
Symbol ST13002T VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM
O
Unit ST13003T 400 700 9 1.5 3 0.75 1.5 2.25 4.5 1.4 11.2 40 320 -65 to +150 89 3.12
O
300 600
V V V A A A W mW/OC W mW/OC
O
Base Current - Continuous Emitter Current - Continuous Emitter Current - Peak Derate above 25 C
O
1)
Total Power Dissipation @ TA = 25 C Total Power Dissipation @ TC = 25 OC Derate above 25 C
O
PD PD TJ, Ts RJA RJC
Operating and Storage Junction Temperature Range Thermal Resistance ,Junction to Ambient Thermal Resistance ,Junction to Case
1)
C
C/W C/W
O
Pulse Test: Pulse Width=5ms, Duty Cycle10%.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 28/04/2006
ST 13002T / ST 13003T
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 0.5 A at VCE = 2 V, IC = 1 A Collector Emitter Sustaining Voltage at IC = 10 mA at IC=10mA Collector Cutoff Current at VCEV = Rated Value, VBE(off) = 1.5 V Emitter Cutoff Current at VEB = 9 V Collector Emitter Saturation Voltage at IC = 0.5 A, IB = 0.1 A at IC = 1 A, IB = 0.25 A at IC = 1.5 A, IB = 0.5 A Base Emitter Saturation Voltage at IC = 0.5 A, IB = 0.1 A at IC = 1 A, IB = 0.25 A Current Gain Bandwidth Product at VCE = 10 V, IC = 100 mA, f = 1 MHz Output Capacitance at VCB = 10 V, f = 0.1 MHz Delay Time Rise Time Storage Time Fall Time Storage Time Crossover Time Fall Time (IC = 1 A,Vclamp = 300 V, IB1 = 0.2 A,VBE(off) = 5 V, TC = 100 C)
O
Symbol hFE hFE ST13002T ST13003T VCEO(sus) VCEO(sus) ICEV IEBO
Min. 8 5 300 400 -
Typ. -
Max. 40 25 1 1
Unit V V mA mA
VCE(sat) VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cob td tr ts tf tsv tc tfi
4 -
10 21 0.15
0.5 1 3 1 1.2 0.1 1 4 0.7 4 0.75 -
V V V V V MHz pF s s s s s s s
(VCC = 125 V, IC = 1 A, IB1 = IB2 = 0.2 A, tp = 25 s, Duty Cycle1%)
1) Pulse Test: Pulse Width=300s, Duty Cycle2%.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 28/04/2006

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